Photoelectron paramagnetic resonance studies of ionization transitions of chromium impurities in ZnS and GaAs
- 15 November 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (10) , 2901-2907
- https://doi.org/10.1063/1.333829
Abstract
The photoelectron paramagnetic resonance (photo‐EPR) technique is applied to studies of photoionization transitions of chromium impurities in ZnS and GaAs lattices. The different dynamic photo‐EPR experiments are discussed enabling an unambiguous interpretation of the nature of photoionization transitions to be made and a determination of the chromium centers ionization energies (Eopt, Eth, Erel) to be carried out.This publication has 15 references indexed in Scilit:
- Large defect-lattice relaxation phenomena in solidsPublished by Springer Nature ,2008
- Deep center characterization by optically-controlled paramagnetic resonance in AgGaS2Journal of Applied Physics, 1981
- Photo-EPR and ODMR investigations of radiative processes in ZnS:Cr,ScJournal of Physics C: Solid State Physics, 1981
- Charge transfer in chromium-doped GaAsPhysical Review B, 1981
- The chromium impurity photogeneration transitions in ZnS, ZnSe and ZnTeJournal of Physics C: Solid State Physics, 1980
- Formation Time of STE at 1Σ+u State in RbBr and KI under Pulsed Electron Beam in Picosecond RangeJournal of the Physics Society Japan, 1980
- Shallow versus deep In donors in CdF2 crystalsSolid State Communications, 1977
- Deep Level Impurities in SemiconductorsAnnual Review of Materials Science, 1977
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965