The effect of ion energy on the formation of the silicon carbide interface of hydrogenated amorphous carbon films grown on silicon by plasma assisted chemical vapor deposition
- 1 January 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 260 (1-3) , 85-96
- https://doi.org/10.1016/0039-6028(92)90021-w
Abstract
No abstract availableKeywords
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