InP/InGaAs resonant cavity enhanced photodetectorand light emitting diode with external mirrors on Si
- 1 September 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (18) , 1527-1529
- https://doi.org/10.1049/el:19941057
Abstract
Epitaxial lift-off (ELO) techniques were employed in the fabrication of InP/InGaAs vertical surface light emitting diodes and resonant cavity enhanced photodetectors on Si. External mirrors were employed consisting of Si/SiO2 quarter wave dielectric stacks. The main peak in the emission spectrum of the fabricated device has an FWHM of 8 nm. The spectral response of the photodetector shows wavelength selectivity, and with an InGaAs absorbing layer only 0.1 µm thick a peak quantum efficiency of 0.48 was obtained in the 1.5 µm spectral region.Keywords
This publication has 8 references indexed in Scilit:
- Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laserElectronics Letters, 1993
- Threshold reduction of 1.3 μm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowthElectronics Letters, 1993
- Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laserIEEE Photonics Technology Letters, 1992
- Room temperature photopumped 1.5 μm quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectorsElectronics Letters, 1991
- Grafted semiconductor optoelectronicsIEEE Journal of Quantum Electronics, 1991
- Resonant cavity-enhanced (RCE) photodetectorsIEEE Journal of Quantum Electronics, 1991
- Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substratesApplied Physics Letters, 1990
- Surface emitting semiconductor lasersIEEE Journal of Quantum Electronics, 1988