Solid state annealing of ion implanted silicon by incoherent light pulses and multiscan electron beam

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Abstract
High fluence energy pulses in the nanosecond-microsecond time range involving the melting of a surface layer have been demonstrated as a very successful tool in annealing ion-implanted semiconductors. As an alternative method, longer annealing time in the 50 microsecond to 100 millisecond range can be used by supplying the necessary energy by a series of multiple scans of an electron beam or incoherent light flash. In, this case the annealing can take place via solid phase epitaxial regrowth of the damaged layer. Apparatus description, surface temperature measurements and experimental results obtained with such annealing methods are presented on ion-implanted silicon samples, showing the possibility of regrowing high quality implanted layers over large area specimens, without affecting carrier mobility, diffusion length and transport parameters and giving rise to good efficiency solar cells.