Random Dopant Fluctuation in Limited-Width FinFET Technologies
- 23 July 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 54 (8) , 2055-2060
- https://doi.org/10.1109/ted.2007.901154
Abstract
In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally ldquoundopedrdquo silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The implication from RDF for design is also discussed.Keywords
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