The complete doping profile using MOS CV technique
- 1 April 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (4) , 343-351
- https://doi.org/10.1016/0038-1101(83)90134-x
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Limits of applicability of the depletion approximation and its recent augmentationApplied Physics Letters, 1981
- Interpretation of C-V measurements for determining the doping profile in semiconductorsSolid-State Electronics, 1980
- Determination of the semiconductor doping profile right up to its surface using the MIS capacitorSolid-State Electronics, 1975
- Correcting interface-state errors in MOS doping profile determinationsJournal of Applied Physics, 1973
- Using the MIS capacitor for doping profile measurements with minimal interface state errorIEEE Transactions on Electron Devices, 1973
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]IBM Journal of Research and Development, 1969
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962