GaAlAs/GaAs solar cells grown by molecular beam epitaxy: Material properties and device parameters
- 31 May 1986
- journal article
- Published by Elsevier in Solar Cells
- Vol. 17 (2-3) , 373-381
- https://doi.org/10.1016/0379-6787(86)90024-4
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Minority-carrier lifetime study of the pressure induced Γ-X crossover in GaAsApplied Physics Letters, 1985
- (GaAl)As Tuneel junctions grown by molecular beam epitaxy: Intercell ohmic contacts for multiple-band-gap solar cellsSolar Cells, 1984
- Influence of radiative recombination on the minority-carrier transport in direct band-gap semiconductorsJournal of Applied Physics, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Molecular beam epitaxial GaAs heteroface solar cell grown on GeApplied Physics Letters, 1980
- TelecommunicationsCommunication Booknotes, 1980
- Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxyElectronics Letters, 1980
- Efficient shallow-homojunction GaAs solar cells by molecular beam epitaxyApplied Physics Letters, 1979
- Some optical properties of the AlxGa1−xAs alloys systemJournal of Applied Physics, 1976
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975