Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation
- 1 November 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (11A) , L1482-1485
- https://doi.org/10.1143/jjap.34.l1482
Abstract
ArF excimer laser induces silicon precipitation accompanied by nitrogen desorption on the surface of an amorphous Si3N4 film, when the laser fluence exceeds the critical fluence which is about 0.2 J/cm2. The amount of nitrogen desorption and the silicon precipitation of the amorphous Si3N4 film increases with increasing laser fluence. The depth of the silicon precipitation on the amorphous Si3N4 film increases exponentially with increasing laser fluence.Keywords
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