Ultrasoft X-Ray Emission Spectroscopic Analysis for Effects of Vacuum Ultraviolet Rare Gas Excimer Laser Irradiation on Silicon Nitride Films
- 1 November 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (11A) , L1549
- https://doi.org/10.1143/jjap.33.l1549
Abstract
The results of measurements of Si-L2,3 X-ray emission spectra of Si3N4 films deposited on GaAs substrates after irradiation by Kr2 and Ar2 excimer lasers are presented. By using the excitation of X-ray emission spectra with focused electron beam, local precipitation of crystalline silicon is found.Keywords
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