On the use of S‐parameter measurements to model hbt intrinsic elements for large‐signal analysis purposes

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Abstract
S‐parameter measurements at 50 bias points covering the saturation and the active operating mode regions are used to model the bias dependence of the equivalent circuit elements representing the intrinsic part of a 3 × 5 μm2 HBT. It is shown that most of the intrinsic elements depend significantly on the biasing base current. Among these elements, some are also relatively dependent on the collectoremitter voltage. The intrinsic element bias‐dependent equations are determined in such a manner that they model the device in both active and saturation regions. These element models are important in the development of a large‐signal HBT model useful in nonlinear simulations. © 1993 John Wiley & Sons, Inc.