Sinusoidal and digital high-speed modulation of p-type substrate mass-transported diode lasers
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 5 (3) , 300-304
- https://doi.org/10.1109/jlt.1987.1075505
Abstract
The modulation characteristics of GaInAsP diode lasers grown onp-type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made onn-type substrates. A small-signal -3-dB frequency as high as 16.4 GHz has been measured with a 175- μm-long laser. The laser responds to large-signal digital word sequences at rates of 16 Gbit/s.Keywords
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