The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

This publication has 8 references indexed in Scilit:

• Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Ultra-shallow junction technology for 100 nm CMOS: xR LEAP implanter and RTP-centura rapid thermal annealer
  Materials Chemistry and Physics, 1998
• Dopant profile and defect control in ion implantation by RTA with high ramp-up rate
  Materials Chemistry and Physics, 1998
• Gate engineering for deep-submicron CMOS transistors
  IEEE Transactions on Electron Devices, 1998
• Kinetics of arsenic segregation at grain boundaries in polycrystalline silicon
  Semiconductor Science and Technology, 1997
• Diffusion and Electrical Properties of Boron and Arsenic Doped Poly‐Si and Poly‐ Ge x Si1 − x (x ∼ 0.3) as Gate Material for Sub‐0.25 μm Complementary Metal Oxide Semiconductor Applications
  Journal of the Electrochemical Society, 1997
• Influence of the Grain Boundaries and Intragrain Defects on the Performance of Poly‐Si Thin Film Transistors
  Journal of the Electrochemical Society, 1997
• The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
  IEEE Transactions on Electron Devices, 1990