Thickness measurement of thin films by x-ray absorption
- 1 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1) , 499-501
- https://doi.org/10.1063/1.347691
Abstract
An x-ray diffraction method for determining thicknesses of thin films grown on single-crystal substrates is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were developed. The thickness of the thin film was computed from the absorption of the integrated diffracted x-ray intensity from the single-crystal substrate. Since the diffracted intensity from the film is not required, the film does not have to be single crystal in nature. Thus, thicknesses of less ordered, polycrystalline, or even amorphous films can be measured with high precision by this technique.This publication has 7 references indexed in Scilit:
- An x-ray diffraction method for measuring thicknesses of epitaxial thin filmsJournal of Applied Physics, 1989
- Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxyApplied Physics Letters, 1988
- Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometryJournal of Applied Physics, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981
- XCII. The reflexion of X-rays from imperfect crystalsJournal of Computers in Education, 1922
- XXXIV. The theory of X-ray reflexionJournal of Computers in Education, 1914