Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates
- 15 March 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (12) , 7876-7879
- https://doi.org/10.1103/physrevb.53.7876
Abstract
The evolution of surface roughness on epitaxial Si films grown at 300 °C by ultrahigh vacuum ion-beam sputter deposition onto nominally singular, [100]-, and [110]-miscut Si(001) is inconsistent with conventional scaling and hyperscaling laws for kinetic roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contrary to previous high-temperature growth results, the presence of steps during deposition at 300 °C increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughness on vicinal substrates. © 1996 The American Physical Society.Keywords
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