Gap States in Hydrogenated Amorphous Silicon—Carbon Alloys
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electronic and optical properties of glow-discharge amorphous silicon-carbon alloysPhilosophical Magazine Part B, 1984
- Gap states in a-Si:H by photoconductivity and absorptionJournal of Non-Crystalline Solids, 1983
- Electroluminescence in hydrogenated amorphous silicon-carbon alloyApplied Physics Letters, 1983
- Defects in hydrogenated amorphous silicon-carbon alloy films prepared by glow discharge decomposition and sputteringJournal of Applied Physics, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Application of amorphous silicon field effect transistors in integrated circuitsApplied Physics A, 1981
- Photoluminescence and optical properties of plasma-deposited amorphous Si x C1–x alloysPhilosophical Magazine Part B, 1981
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- Compositional and structural properties of amorphous SixC1−x : H alloys prepared by reactive sputteringJournal of Applied Physics, 1979
- Reactive plasma deposited SixCyHz filmsThin Solid Films, 1979