In-situ monitoring of antiphase domain evolution during atomic layer MBE (ALMBE) and MBE growth of GaAs/Si(001) by reflectance difference
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 120-124
- https://doi.org/10.1016/0022-0248(91)90958-8
Abstract
No abstract availableKeywords
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