Planar dechanneling studies of strained-layer superlattice structures
- 15 December 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 218 (1-3) , 81-89
- https://doi.org/10.1016/0167-5087(83)90959-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Summary Abstract: Structural studies of InGaAs/GaAs and GaAsP/GaP strained-layer superlattices by ion channelingJournal of Vacuum Science & Technology B, 1983
- Ion-beam crystallography of InAs-GaSb superlatticesPhysical Review B, 1982
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Planar channeling of ions in compound semiconductor superlatticesJournal of Vacuum Science and Technology, 1982
- Ion backscattering and channeling study of InAs-GaSb superlatticesApplied Physics Letters, 1980
- Continuum-model planar channeling and the tangent-squared potentialPhysical Review B, 1978
- Planar-channeling spatial density under statistical equilibriumPhysical Review B, 1978