Electrical and optical properties of Li-doped MBE-grown p-type ZnSe films
- 1 September 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (9A) , A72-A75
- https://doi.org/10.1088/0268-1242/6/9a/012
Abstract
ZnSe epilayers on GaAs were doped with Li during growth using an alkali metal dispenser in an MBE reactor. The lithium beam intensity was controlled by the dispenser current. Photoluminescence spectra, current-voltage and capacitance-voltage data were measured on these samples. ZnSe:Li layers exhibit a strong acceptor bound exciton emission which decreases with increasing Li beam intensity. The evaluation of the capacitance-voltage measurements gave an Li doping concentration profile. The Li concentration increases with depth by about an order of magnitude within a distance of 0.4 mu m. The authors assume that this Li out-diffusion process is already occurring during growth.Keywords
This publication has 18 references indexed in Scilit:
- ZnSe light-emitting diodesApplied Physics Letters, 1990
- p-Doping of epitaxial ZnSe using group I elementsJournal of Crystal Growth, 1990
- Arsenic doped ZnSe grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Characterization of p-type ZnSeJournal of Applied Physics, 1990
- Growth of Li-doped ZnSe by molecular beam epitaxy using an alkali metal dispenserVacuum, 1990
- Confirmation of P-Type Conduction in Li-Doped ZnSe Layers Grown on GaAs SubstratesJapanese Journal of Applied Physics, 1990
- Electrical characterization of p-type ZnSeApplied Physics Letters, 1989
- Antimony-doped ZnSe grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion dopingApplied Physics Letters, 1986
- Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986