Determination of recombination lifetime in MOSFET’s

15 March 1980

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 36 (6) , 437-438
https://doi.org/10.1063/1.91536

Abstract

A technique is presented for measuring the surface and volume minority‐carrier recombination lifetime in MOSFET’s. The method, based on the charge pumping effect, is particularly useful for measurements on MOS transistors which have passed the whole technological process. Room temperature and nitrogen temperature results are presented. A further advantage of this technique is the simplicity in equipment and analysis of the data.

Keywords

This publication has 8 references indexed in Scilit:

Determination of generation lifetime from non-equilibrium linear-sweep current and capacitance measurements on an MOS capacitor
Solid-State Electronics, 1978
Bulk lifetime determination of MOS structures by a voltage step response method
Solid-State Electronics, 1978
Minority carrier recombination in MOS capacitors switched from inversion to accumulation
Solid-State Electronics, 1977
Determination of generation lifetime from the small-signal transient behavior of MOS capacitors
Solid-State Electronics, 1975
Lifetime measurements in silicon epitaxial materials
Solid-State Electronics, 1975
A linear-sweep MOS-C technique for determining minority carrier lifetimes
IEEE Transactions on Electron Devices, 1972
Charge pumping in MOS devices
IEEE Transactions on Electron Devices, 1969
On the determination of minority carrier lifetime from the transient response of an MOS capacitor
IEEE Transactions on Electron Devices, 1967