Epitaxy of mixed III–V compounds
- 31 December 1973
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 7, 176-191
- https://doi.org/10.1016/0022-2313(73)90066-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Thermodynamical Analysis for Vapor Growth of GaxIn1-xAs CrystalsJapanese Journal of Applied Physics, 1971
- Mass Spectrometric Studies of Vapor Phase Crystal GrowthJournal of the Electrochemical Society, 1971
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- Deposition of Epitaxial InAs[sub x]P[sub (1−x)] on GaAs and GaP SubstratesJournal of the Electrochemical Society, 1970
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- Preparation of Epitaxial Ga[sub x]In[sub 1−x]AsJournal of the Electrochemical Society, 1967
- The Preparation and Properties of GaAs-InAs Mixed CrystalsJournal of the Electrochemical Society, 1965
- The Chlorides of GalliumJournal of the American Chemical Society, 1940