High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates
- 1 July 1994
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (7) , 675-679
- https://doi.org/10.1007/bf02653355
Abstract
No abstract availableKeywords
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