Type II recombination and band offset determination in a tensile strained InGaAs quantum well
- 16 June 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (24) , 3257-3259
- https://doi.org/10.1063/1.119140
Abstract
Photoluminescencemeasurements under different excitation powers and time-resolved photoluminescence experiments were carried out at low temperature on tensile strained In 0.3 Ga 0.7 As quantum wells with InGaAs barriers lattice matched to InP. Evidence of a type II recombination is found between carriers confined in the tensile strained layer and in the lattice matched one. This study allows us to propose a precise determination of the light holes band offset in the In 0.3 Ga 0.7 As/In 0.53 Ga 0.47 As system.Keywords
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