Enhanced diffusion of antimony within a heavily phosphorus-doped layer
- 15 June 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (12) , 4177-4179
- https://doi.org/10.1063/1.336678
Abstract
Antimony diffusion within a heavily phosphorus-doped silicon layer has been studied. Enhanced diffusion of antimony has been found within a heavily phosphorus-doped layer, which contrasts with the retarded diffusion below such layers reported elsewhere. Antimony diffusivity increases in proportion to a certain power of electron concentration when carriers are given by phosphorus, and resembles the behavior of phosphorus diffusivity. These results indicate that the increase of charged vacancies due to Fermi-level effect within heavily phosphorus-doped layers coexists with vacancy undersaturation below the layer.This publication has 10 references indexed in Scilit:
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