Homojunction diode of CuInSe2 thin film fabricated by nitrogen implantation

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Abstract
Rectifying homojunction have been fabricated in polycrystalline CuInSe2 thin film. The p‐n junction diode was obtained by short annealing in nitrogen atmosphere at 450 °C following the ion implantation of nitrogen with the energy and the dose of 50 keV and 1×1015 cm−2, respectively. The properties of the near surface region in the films implanted have been studied by the Raman scattering spectroscopy. The secondary ion mass spectroscopy depth profile of the nitrogens in the CuInSe2 film and the capacitive‐voltage characteristics of the rectifying diode have been measured to characterize the junction properties. The photovoltaic characteristics in AM 1.0, 100 mW/cm2 are shown with the efficiency of 0.35%.