Local distribution of deep centers in GaP studied by infrared cathodoluminescence
- 21 January 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (3) , 257-259
- https://doi.org/10.1063/1.104681
Abstract
Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to PGa antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.Keywords
This publication has 7 references indexed in Scilit:
- Composite character of the red band emission in LEC GaP:SMaterials Chemistry and Physics, 1989
- Influence of vacancy defects on the luminescence of GaP studied by CL and positronsSolid State Communications, 1988
- Deep acceptorlike recombination centers in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonanceJournal of Applied Physics, 1988
- Effects of stoichiometry on deep levels in MOVPE GaPSemiconductor Science and Technology, 1988
- Spatial distribution of vacancy defects in GaP wafersJournal of Applied Physics, 1988
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- ODMR investigation of the PGaantisite defect in GaPJournal of Physics C: Solid State Physics, 1982