Determination of Oxygen Concentration in Silicon by Infrared Absorption
- 1 January 1983
- book chapter
- Published by ASTM International
- p. 469-476
- https://doi.org/10.1520/stp36185s
Abstract
Infrared absorption measurement and activation analyses were carried out for various CZ crystals with different oxygen concentrations. Data for infrared (IR) absorption were found to vary depending upon various factors such as wafer thickness and surface finishing. Under well-defined experimental conditions, however, an accurate linear correlation between the IR absorption and oxygen concentration measured by activation analysis was obtained: 6.0 × absorption coefficient = oxygen concentration in parts per million atomic (ppma).This publication has 9 references indexed in Scilit:
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