Abstract
Swirl‐free silicon crystals were grown, and the relation between growth condition and oxide precipitates (1100 °C) has been studied by the Secco etching technique and x‐ray topography. It was found that precipitates are formed at very high densities in crystals which were grown by introducing temperature fluctuations during the growth. They are located in the seed side of a remelt boundary on which a new growth circle started after each remelting. These results are similar to those for swirl defects in float‐zoned crystals. It is proposed that the precipitates are originated from liquid drops which are formed in interface regions superheated by temperature fluctuations during the growth.