Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs

This publication has 14 references indexed in Scilit:

• AlGaN/GaN heterojunction bipolar transistor structures-design considerations
  Journal of Applied Physics, 2000
• Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures
  Solid-State Electronics, 2000
• Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
  Applied Physics Letters, 2000
• High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors
  Solid-State Electronics, 2000
• GaN/AlGaN HBT fabrication
  Solid-State Electronics, 2000
• AlGaN/GaN heterojunction bipolar transistors grownbymetal organic chemical vapour deposition
  Electronics Letters, 2000
• Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 h
  Japanese Journal of Applied Physics, 1999
• AlGaN/GaN heterojunction bipolar transistor
  IEEE Electron Device Letters, 1999
• Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
  Applied Physics Letters, 1999
• 300°C GaN/AlGaN Heterojunction Bipolar Transistor
  MRS Internet Journal of Nitride Semiconductor Research, 1998