Formation of buried nitride silicon-on-insulator structures studied by Auger electron spectroscopy and transmission electron microscopy
- 15 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (10) , 4118-4123
- https://doi.org/10.1063/1.339127
Abstract
The formation of buried nitride silicon-on-insulator structures is studied by means of Auger electron spectroscopy and transmission electron microscopy. 160-keV N+ ions are implanted to doses of 7.0 and 9.5×1017 atoms cm−2, respectively, at a substrate temperature of 550 °C. Annealing between 1150 and 1200 °C removes most of the damage in the top silicon layer in ≤ 1 h. In ≤ 13 h the buried layer turns into crystalline Si3N4. This crystallization process starts at a depth where the N concentration is well below the value for Si3N4.This publication has 6 references indexed in Scilit:
- Microstructure of Silicon Implanted with High Doses of Nitrogen and OxygenJournal of the Electrochemical Society, 1986
- Transmission electron microscopy and Auger electron spectroscopy of silicon-on-insulator structures prepared by high-dose implantation of nitrogenJournal of Applied Physics, 1985
- Electron and ion beam degradation effects in AES analysis of silicon nitride thin filmsSurface and Interface Analysis, 1985
- Chemical trends in lattice location of implanted impurities in siliconRadiation Effects, 1985
- Lattice positions of implanted ions in silicon crystalsRadiation Effects, 1984
- Chemical vapour-deposited silicon nitrideJournal of Materials Science, 1976