Single target sputtering of superconducting YBa2Cu3O7−δ thin films on Si (100)

Abstract
Thin films of YBa2Cu3O7−δ have been grown on (100) silicon substrates by single target rf diode sputtering. Yttria‐stabilized zirconia buffer layers were used to minimize substrate‐film reactions. Off‐stoichiometric targets were used to compensate for differences between film and target stoichiometries. The composition of the superconducting layer is also influenced by post‐deposition anneals, with films closer to the desired stoichiometry resulting from the higher temperature anneals. Film thicknesses spanned the 0.5–2.0 μm range and the onset and zero resistance ( ρ−7 Ω cm) temperatures were found to be 95 and 70 K, respectively, for 1.8‐μm‐thick films.