Comparison of characteristics of lightly-doped drain MOSFETs
- 31 January 1990
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (1) , 143-144
- https://doi.org/10.1016/0038-1101(90)90020-f
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- LDD MOSFETs using disposable sidewall spacer technologyIEEE Electron Device Letters, 1988
- N-source/drain compensation effects in submicrometer LDD MOS devicesIEEE Electron Device Letters, 1987
- A model for the electric field in lightly doped drain structuresIEEE Transactions on Electron Devices, 1987
- High holding voltage C-MOS technology with lightly doped source and drain regionsIEEE Transactions on Electron Devices, 1987
- Reduced hot-electron effects in MOSFET's with an optimized LDD StructureIEEE Electron Device Letters, 1984
- Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistorIEEE Transactions on Electron Devices, 1980
- 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraintsIEEE Transactions on Electron Devices, 1979