Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InP

This publication has 10 references indexed in Scilit:

• Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures
  Applied Physics Letters, 1988
• Improvements to and characterization of GaInAs/AlInAs heterointerfaces grown by molecular-beam epitaxy
  Journal of Vacuum Science & Technology B, 1988
• Absorption spectroscopy on ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48\mathrm{L}}$${\mathrm{In}}_{0.52}$As multi-quantum-well heterostructures. I. Excitonic transitions
  Physical Review B, 1987
• X-ray diffraction of multilayers and superlattices
  Acta Crystallographica Section A Foundations of Crystallography, 1986
• Improved assessment of structural properties of ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs heterostructures and superlattices by double-crystal x-ray diffraction
  Physical Review B, 1986
• Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperature
  Applied Physics A, 1985
• Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells
  Journal of Vacuum Science & Technology B, 1985
• Role of interface roughness and alloy disorder in photoluminescence in quantum-well structures
  Journal of Applied Physics, 1985
• The dynamic theory of X-ray diffraction by the one-dimensional ideal superlattice. I. Diffraction by the arbitrary superlattice
  Acta Crystallographica Section A Foundations of Crystallography, 1985
• Substrate rotation-induced compositional oscillation in molecular beam epitaxy (MBE)
  Journal of Vacuum Science & Technology B, 1983