Influence of indium on the dissociation of dislocations in GaAs at high temperature
- 1 January 1988
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 23 (3) , 251-255
- https://doi.org/10.1051/rphysap:01988002303025100
Abstract
Dislocations have been introduced in GaAs doped with indium, by plastic deformation between 773 K and 1 373 K. Transmission electron microscope observations have shown that indium increases the width of dissociation. This can explain the reduction of as-grown dislocations in In doped GaAsKeywords
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