Conductance technique measurements of the density of interface states between ZnS:Mn and p-silicon

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Abstract
Capacitance and conductance measurements are presented for dc‐driven Au/ZnS:Mn/p‐Si electroluminescence metal‐insulator‐semiconductor (MIS) devices, where the ZnS:Mn films are deposited by radio frequency sputtering. Stable dc operation is achieved by introducing oxygen into the film during deposition and subsequently annealing. The effect of the post‐deposition annealing upon the density of states at the ZnS:Mn/p‐Si interface is investigated. As deposited, the devices show unusual MIS C‐V characteristics, that indicate a very high interface state density. Annealing at 700 °C, normal C‐V characteristics are observed, indicating that the very high density of states is greatly reduced. For these films the conductance technique has been used to measure the density of states at the interface between the ZnS:Mn and p‐Si. The statistical model is found to describe most accurately the interface state conductance response. The interface state density consists of a tail of states that varies between 3.7×1013 cm−2 eV−1 at the silicon Fermi level and 1.1×1013 cm−2 eV−1 at the silicon mid‐gap. A small peak is superimposed upon this tail at (−0.16±0.01) eV below mid‐gap. The tail of states is believed to be intrinsic to the ZnS:Mn/p‐Si interface, but evidence suggests that the small peak is due to the presence of oxygen, which is shown by secondary‐ion mass spectrometry analysis to accumulate at the interface after annealing at 700 °C. It seems likely that the very high density of interface states in as deposited devices is a consequence of a plasma damage to the silicon surface during growth, creating defects such as silicon dangling bonds. One possible explanation for the decrease in this density is that by annealing at 700 °C, oxygen in the bulk of the film diffuses to the interface, where it mops up these defects by forming compounds such as SiOx. A simpler model of interface recrystallization is also suggested. The doping density in the depletion region of the silicon is calculated as (7.5±0.5)×1014 cm−3, and the interface state capture cross section for holes is found to have mean value of approximately 10−15 cm−2.