High-performance AlInAs/GaInAs/InP DHBT X-band power cell with InP emitter ballast resistor

This publication has 12 references indexed in Scilit:

• Accurate on-wafer power and harmonic measurements of MM-wave amplifiers and devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• InP based carbon-doped base HBT technology: its recent advances and circuit applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers
  IEEE Transactions on Electron Devices, 1994
• The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling
  IEEE Transactions on Electron Devices, 1994
• Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors
  IEEE Electron Device Letters, 1993
• Use of the three-dimensional TLM method in the thermal simulation and design of semiconductor devices
  IEEE Transactions on Electron Devices, 1992
• Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1991
• Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz
  IEEE Transactions on Microwave Theory and Techniques, 1990
• Bipolar Microwave Linear Power Transistor Design
  IEEE Transactions on Microwave Theory and Techniques, 1979