On laser annealing and lattice melting
- 1 September 1980
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 78 (5-6) , 477-480
- https://doi.org/10.1016/0375-9601(80)90430-2
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Experimental comparison of localized and free carrier Auger recombination in siliconSolid-State Electronics, 1978
- Measurement of Auger recombination in silicon by laser excitationSolid-State Electronics, 1978
- Auger-rekombination in SiSolid State Communications, 1973
- The spectrum and decay of the recombination radiation from strongly excited siliconSolid State Communications, 1972
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Two-Phonon Indirect Transitions and Lattice Scattering in SiPhysical Review B, 1960
- Analysis of intrinsic recombination radiation from silicon and germaniumJournal of Physics and Chemistry of Solids, 1959
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954