Potential mapping of pentacene thin-film transistors using purely electric atomic-force-microscope potentiometry
- 18 March 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (12) , 122112
- https://doi.org/10.1063/1.1891306
Abstract
Potential mapping of organic thin-film transistors(TFTs) has been carried out using originally developed atomic-force-microscope potentiometry (AFMP). The technique is suitable for the accurate measurement at metal–semiconductor boundaries of working TFTs. Potential drops near metal–organic boundaries are observed for both source and drain Au top contacts of a pentacene TFT. The approximate width of the steeper potential slope is 400 nm, which is larger than the spatial resolution of AFMP. The potential drop is considered to be due to a damaged area with low carrier mobility caused by the Au evaporation, which is also reproduced by device simulation.Keywords
This publication has 11 references indexed in Scilit:
- Structural and electrical characterization of pentacene films on SiO2 grown by molecular beam depositionThin Solid Films, 2004
- Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopyApplied Physics Letters, 2003
- Potential imaging of pentacene organic thin-film transistorsApplied Physics Letters, 2003
- Nanoscale Electrical Properties of Molecular Films in the Vicinity of Platinum Ultrathin Film ElectrodeJapanese Journal of Applied Physics, 2003
- Development of AFM potentiometry for potential mapping of organic conductorsSynthetic Metals, 2003
- Noncontact potentiometry of polymer field-effect transistorsApplied Physics Letters, 2002
- Potentiometry of an operating organic semiconductor field-effect transistorApplied Physics Letters, 2001
- Measuring and modifying the electric surface potential distribution on a nanometre scale: a powerful tool in science and technologySurface and Interface Analysis, 1999
- Molecular nanostructures and their electrical probingThin Solid Films, 1998
- Potentiometry and repair of electrically stressed nanowires using atomic force microscopyApplied Physics Letters, 1998