X-ray photo-emission and Auger spectra of damage induced by Ar+-ion etching at SiO2surfaces
- 14 August 1987
- journal article
- letter
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 20 (8) , 1091-1094
- https://doi.org/10.1088/0022-3727/20/8/022
Abstract
X-ray photo-emission spectroscopy (XPS) and X-ray-induced Auger spectroscopy have been used to study changes induced by Ar+ ions at silica surfaces. No evidence of appreciable surface damage was found for ion energies up to 2 keV. Results of the 6 keV exposed sample showed occurrence of both SiO2 and SiOx phases. Quantitative XPS analysis was used to monitor modifications in the silica surface stoichiometry as a function of the etching treatment. Whereas Ar+ ions of energy up to 2 keV leave the surface composition virtually unchanged, the nO/nSi atomic ratio drops to 1.40 in the 6 keV exposed sample.Keywords
This publication has 17 references indexed in Scilit:
- An XPS study of Si as it occurs in adsorbents, catalysts, and thin filmsPublished by Elsevier ,2002
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Study of interfaces in oxidized Fe/Si system by XPS and XAES: Use of the Auger parameterSurface and Interface Analysis, 1986
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- Auger and photoelectron line energy relationships in aluminum–oxygen and silicon–oxygen compoundsJournal of Vacuum Science and Technology, 1982
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profilingApplied Physics Letters, 1978
- Effects of ion sputtering on semiconductor surfacesSurface Science, 1978
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- Attenuation lengths of low-energy electrons in solidsSurface Science, 1974