Modeling of laser-annealed polysilicon TFT characteristics
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (7) , 315-318
- https://doi.org/10.1109/55.596923
Abstract
A model based on two-dimensional (2-D) simulation, for a polysilicon thin-film transistor (poly-Si TFT) with large grains, fabricated in laser recrystallized material, is presented. The importance of differentiating between the density of states of traps within grains and traps localized at grain boundaries is demonstrated. It is shown that the observed lack of saturation in the TFT output characteristics arises due to the effect of high interface trap density within the grain boundaries, whereas the subthreshold slope has a strong dependence on the trap density within the grains. Only by differentiating in this way between grain and grain boundary parameters can both output and subthreshold characteristics of an n-channel poly-Si TFT be accurately modeled using the same set of parameters. Appropriate values for the density of states in both grains and grain boundaries are suggested for laser-annealed TFTs.Keywords
This publication has 12 references indexed in Scilit:
- Analysis of Hot-Carrier Effects, 'Kink' Effect and Low Frequency Noise in Polycrystalline Silicon Thin-Film TransistorsSolid State Phenomena, 1996
- Output characteristics of short-channel polycrystalline silicon thin-film transistorsJournal of Applied Physics, 1995
- Characterization of trapping states in polycrystalline-silicon thin film transistors by deep level transient spectroscopyJournal of Applied Physics, 1993
- On the pseudo-subthreshold characteristics of polycrystalline-silicon thin-film transistors with large grain sizeIEEE Electron Device Letters, 1993
- Avalanche-induced effects in polysilicon thin-film transistorsIEEE Electron Device Letters, 1991
- Estimation of heat transfer in SOI-MOSFETsIEEE Transactions on Electron Devices, 1991
- Determination of grain-boundary defect-state densities from transport measurementsJournal of Applied Physics, 1991
- Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film TransistorsJapanese Journal of Applied Physics, 1990
- Numerical simulation of polycrystalline-Silicon MOSFET'sIEEE Transactions on Electron Devices, 1986
- A mobility model for carriers in the MOS inversion layerIEEE Transactions on Electron Devices, 1983