16 GHz bandwidth MSM photodetector and 45/85 GHz f T / f max HEMTprepared on an identical InGaAs/InP layer structure
- 11 April 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (8) , 763-764
- https://doi.org/10.1049/el:19960454
Abstract
An MSM photodetector and a HEMT prepared on an identical InGaAs/InP layer structure are demonstrated for the first time. A 150 nm undoped InGaAs layer is inserted above the 2DEG to enhance the photodetector responsivity, and a bandwidth of 16 GHz is achieved. On the same wafer, processed HEMTs show optimal high frequency performance with an fT of 45 GHz and an fmax of 85 GHz. This procedure could be suitable for the preparation of monolithically integrated photoreceivers with high performance and low cost.Keywords
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