The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 913-917
- https://doi.org/10.1016/0022-0248(93)90759-p
Abstract
No abstract availableKeywords
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