Interface state generation by alternating voltage stress under visible irradiation at the silicon-silicon dioxide interface
- 1 February 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (2) , 1162-1164
- https://doi.org/10.1063/1.332092
Abstract
The generation of interface states in SiO2 metal-oxide-semiconductor capacitors was observed when the structure was stressed simultaneously by a visible radiation and alternating voltage of relatively large amplitude. A correlation between the number of newly generated interface states and the amplitude of the cycling voltage has been found. Part of the surface states generated by a relatively low ac cycling amplitude were relaxable with time. The cause of the generation of interface states at the silicon-silicondioxide (Si-SiO2) interface has been associated with the hot electrons and holes injected into SiO2 by the comparatively large amplitude of the alternating voltage.This publication has 17 references indexed in Scilit:
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