POST-BREAKDOWN CONDUCTION IN FORWARD-BIASED P-I-N SILICON DIODES
- 1 November 1964
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 5 (9) , 186-188
- https://doi.org/10.1063/1.1754111
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Breakdown and hysteresis in forward biased P-N GaAs luminescent junctionsProceedings of the IEEE, 1964
- Avalanche Effects in Silicon p—n Junctions. I. Localized Photomultiplication Studies on MicroplasmasJournal of Applied Physics, 1963
- Double Injection Diodes and Related DI Phenomena in SemiconductorsProceedings of the IRE, 1962
- Injection Currents in InsulatorsProceedings of the IRE, 1962
- Filamentary Impact Ionization in Compensated Germanium at 4.2°KJournal of Applied Physics, 1962
- Double Injection in InsulatorsPhysical Review B, 1962
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961
- Mechanism of Photoconductivity in Microcrystalline PowdersJournal of Applied Physics, 1960
- Injection Breakdown in Iron-Doped Germanium DiodesPhysical Review B, 1954