Damage annealing behavior in diatomic phosphorus ion implanted silicon
- 1 November 1990
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 115 (1-3) , 183-192
- https://doi.org/10.1080/10420159008220566
Abstract
Damaging effect of diatomic phosphorus ions implanted into silicon was compared with that of atomic ions in the range between 25 and 300 keV/atom. Dose was around 1014 ions/cm2. Target temperature varied between 77 and 533 K. Below and at 300 K the “damage enhancement factor” defined as ratio of damage produced by equivalnet molecular and atomic ion implantation varied from 1 to 1.6 depending on incident energy. At elevated implantation temperature this factor increased by almost an order of magnitude. In interpretation of experimental results, fluctuations in damage structure inside the volume of collision cascades was proposed. Conclusions are believed to be relevant for other molecular implantation, e.g. for the BF2 +.Keywords
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