Investigation of solid phase epitaxial regrowth on ion-implanted silicon by backscattering spectrometry and ellipsometry
- 1 April 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 15 (1-6) , 422-424
- https://doi.org/10.1016/0168-583x(86)90336-8
Abstract
No abstract availableKeywords
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