LPE growth of GaAs by supercooling technique: Elimination of surface terraces
- 1 December 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (11) , 627-628
- https://doi.org/10.1063/1.88313
Abstract
The surface morphology of thin GaAs LPE layers grown on substrates misoriented from the (100) or (111) B plane is studied. The experiments demonstrate that surface terraces can be eliminated by using initially supercooled solutions. Very smooth surfaces are obtained for growth even on substrates miroriented 0–10° off the (100) plane.Keywords
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