A matrix formulation of magnetoresistance for an arbitrary J-fold multicarrier semiconductor system via the reduced-conductivity-tensor scheme in the nonquantizing regime
- 19 June 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (1) , 292-300
- https://doi.org/10.1063/1.368026
Abstract
In this article, a matrix formulation of magnetoresistance in semiconductors is presented for an arbitrary -fold multicarrier system which is based on the reduced-conductivity-tensor scheme and applicable in the nonquantizing regime where Landau orbital quantization is negligible. In the formalism, a unique expression of the magnetoresistance is deduced in terms of two vectors which depend on the carrier densities and mobilities, and three matrices which represent various inter-carrier couplings under the applied magnetic field. In particular, the mobility-difference matrix plays a key role, and its simple form strongly suggests a two-carrier model of magnetoresistance for a narrow continuum distribution. Explicit closed-form formulas of magnetoresistance are derived for the two-carrier and three-carrier systems as special cases of the general formalism. The field dependence and asymptotic behavior of the magnetoresistance are also discussed, and a two-carrier model of magnetoresistance is formally proposed.
This publication has 12 references indexed in Scilit:
- Quantitative mobility spectrum analysis of multicarrier conduction in semiconductorsJournal of Applied Physics, 1997
- Determination of densities and mobilities of heavy and light holes in p-type Si using reduced-conductivity-tensor analyses of magnetic-field-dependent Hall and resistivity measurementsJournal of Applied Physics, 1996
- Characterization of liquid-phase epitaxially grown HgCdTe films by magnetoresistance measurementsJournal of Electronic Materials, 1995
- Electrical characterization of liquid-phase epitaxially grown single-crystal films of mercury cadmium telluride by variable-magnetic-field Hall measurementsSemiconductor Science and Technology, 1994
- Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurementsJournal of Applied Physics, 1993
- Electrical properties of modulation-doped HgTe–CdTe superlatticesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- New method of characterizing majority and minority carriers in semiconductorsApplied Physics Letters, 1987
- Determination of electrical transport properties using a novel magnetic field-dependent Hall techniqueJournal of Applied Physics, 1987
- Effect of Random Inhomogeneities on Electrical and Galvanomagnetic MeasurementsJournal of Applied Physics, 1960
- Transverse Hall and Magnetoresistance Effects in-Type GermaniumPhysical Review B, 1954