Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces

This publication has 11 references indexed in Scilit:

• Status and prospects for SiC power MOSFETs
  IEEE Transactions on Electron Devices, 2002
• MOS capacitor on 4H-SiC as a nonvolatile memory element
  IEEE Electron Device Letters, 2002
• Charge retention in metal–oxide–semiconductor capacitors on SiC used as nonvolatile-memory elements
  Applied Physics Letters, 2002
• Novel SiC accumulation-mode power MOSFET
  IEEE Transactions on Electron Devices, 2001
• Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC
  Applied Physics Letters, 2001
• Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures
  Materials Science Forum, 2000
• Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy
  Journal of Applied Physics, 1999
• Nitridation of silicon-dioxide films grown on 6H silicon carbide
  IEEE Electron Device Letters, 1997
• Silicon Carbide Electronic Materials and Devices
  MRS Bulletin, 1997
• Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface
  Journal of Electronic Materials, 1995