Nitridation of silicon-dioxide films grown on 6H silicon carbide
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (5) , 175-177
- https://doi.org/10.1109/55.568752
Abstract
This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation. The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N/sub 2/O. The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N/sub 2/O annealing.Keywords
This publication has 21 references indexed in Scilit:
- Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectricsIEEE Transactions on Electron Devices, 1995
- Characteristics of top-gate thin-film transistors fabricated on nitrogen-implanted polysilicon filmsIEEE Transactions on Electron Devices, 1995
- The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processingIEEE Electron Device Letters, 1994
- Thermal Oxidation of SiC in N 2 OJournal of the Electrochemical Society, 1994
- MOS characteristics of ultrathin NO-grown oxynitridesIEEE Electron Device Letters, 1994
- High quality ultrathin dielectric films grown on silicon in a nitric oxide ambientApplied Physics Letters, 1994
- Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristicsIEEE Electron Device Letters, 1992
- High performancep+-gatepMOSFETs with N2O-nitrided SiO2gate filmsElectronics Letters, 1990
- Highly reliable thin nitrided SiO 2 films formed by rapid thermal processing in an N 2 O ambientElectronics Letters, 1990
- Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1989