Noise characteristics of ionizing-radiation-stressed MOSFET devices
- 30 June 1987
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (6) , 673-674
- https://doi.org/10.1016/0038-1101(87)90229-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Transconductance degradation in VLSI devicesSolid-State Electronics, 1985
- Cosmic ray effects in microelectronicsMicroelectronics Journal, 1985
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- An Electrical Technique to Measure the Radiation Susceptibility of MOS Gate InsulatorsIEEE Transactions on Nuclear Science, 1979
- Derivation of 1ƒ noise in silicon inversion layers from carrier motion in a surface bandSolid-State Electronics, 1968